| PART |
Description |
Maker |
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 5 A, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
| QM50DY24 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 1.2KV五（巴西）总裁| 50A条一（c
|
Leadis Technology, Inc.
|
| SHD618052AN SHD618052AP SHD618052BP SHD618052P SHD |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| DA6/1200 |
6.0A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier
|
Eupec Power Semiconductors
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| RP05-4833SF RP05-1205DF RP05-1205SF RP05-1212DF RP |
5W DC/DC converter with 36-75V input, 33/1000mA output, 2kV isolated
5W DC/DC converter with 36-75V input, 15/400mA output, 2kV isolated
5W DC/DC converter with 36-75V input, 12/4700mA output, 2kV isolated
5W DC/DC converter with 18-36V input, 33/1000mA output, 2kV isolated
5W DC/DC converter with 36-75V input, 5/1000mA output, 2kV isolated
5W DC/DC converter with 18-36V input, 12/470mA output, 2kV isolated
5W DC/DC converter with 18-36V input, 15/400mA output, 2kV isolated
5W DC/DC converter with 18-36V input, 5/1000mA output, 2kV isolated
5W DC/DC converter with 9-18V input, 15/400mA output, 2kV isolated
5W DC/DC converter with 9-18V input, 3.3/1000mA output, 2kV isolated
5W DC/DC converter with 9-18V input, 12/470mA output, 2kV isolated
5W DC/DC converter with 9-18V input, 5/1000mA output, 2kV isolated
POWERLINE - DC/DC - CONVERTER 电力直流/直流-转炉
|
RECOM[Recom International Power]
RECOM Power Inc.
RECOM Electronic GmbH
Shindengen Electric Manufacturing Co., Ltd.
|
| C3D10065I |
Silicon Carbide Schottky Diode
|
Cree
|
| C3D06065A |
Silicon Carbide Schottky Diode
|
Cree
|
| SHD675112 SHD675112B |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON
|
| GR160MT12D |
Silicon Carbide Power MOSFET
|
GeneSiC Semiconductor, ...
|
|
